"SI WAFER, TYPE P, 4"""

These 1", 2", 3", 4" and 6" diameter silicon wafers can be used either as a substrate for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber and the Wafer Cleaving / Glass Breaking Pliers. The wafer is shipped in a wafer carrier. 

Properties:

• Orientation: <100> for 1", 2", 4"and 6" wafer <111> for 3"
• Resistance: 1-30 Ohms
• Type P: (Boron) (1 primary flat)
• No SiO2 top coating
• Wafer thickness:

Ø1" = 10 - 12 mill (254 - 304 µm)
Ø2" = 9 - 13 mill (230 - 330 µm)
Ø3" = 13.6 - 18.5 mill (345 - 470 µm)
Ø4" = 18.7 - 22.6 mill (475 - 575 µm)
Ø6" = 23.6 - 25.2 mill (600 - 690 µm)

• Roughness: 2nm
• TTV: = <20µm
• Wafer is polished on one side